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| Computational
Modelling |
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| Short
Pulse Laser Nanostructuring on a Metal Surface |
| Short
Pulse Laser Ablation of Silicon |
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| Short
Pulse Laser Nanostructuring on a Metal Surface |
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Research efforts toward the
development of direct-write subwavelength structuring technologies
using ultrashort laser pulses are rapidly progressing at present.
With structure sizes in the range of 0.1 - 1 mm,
femtosecond laser processing forfeits its universal character. In this
case, single laser pulses can produce unexpected structures the
physics of formation of which is still not fully understood.
Our
current study is aimed on theoretical investigations of the physical
mechanisms responsible for the formation of microshell and nanojet
structures on the surface of metals [[i],[ii]],
shown in Figure1. These structures are generated by a single laser
pulses and are very reproducible. The geometrical size of these
structures depends on the thickness of metal layer, but they are still
observed with a thick metal targets as can be seen in the middle
image.
Figure
1: SEM images [1
,2
] of an array of microshells and nanojets fabricated in a 60 nm
thick gold film with femtosecond laser pulses (left); a nanojet
produced in a 2500 nm thick gold layer (middle); and a double-shell
structures produced in a 50 nm thick gold layer (right).
In this study, the theoretical
investigation of microshell and nanojet generation is performed
computationally with a combined two-temperature model – molecular
dynamics technique [[iii]].
On atomic level, the model includes a description of the kinetics of
nonequilibrium melting and resolidification [[iv],[v]]
with Molecular Dynamics (MD) technique. In the meantime, on continuum
level, this model ensures for an adequate description of the laser
light absorption by the conduction band electrons, fast electron heat
conduction, and electron-phonon equilibration with Two Temperature
Model (TTM) technique.
The
computational setup is shown in Figure 2. MD
system represents the sample of Ni film on a silica substrate as a
circular slab of 65 nm in diameter and 20 nm in thickness, consisting
of 5,997,600 atoms. The description of electronic system, on the other
hand, is represented on much greater, up to 1 µm, scale and the
lateral wall of the circular slab is freely permeable for heat.
Non-reflective boundary conditions are also applied on the lateral
side of MD system to absorb the laser-induced pressure recoil.
The
preliminary results of calculations reveal a complex mechanism of a
nanobump formation. Based on the performed calculations, it can be
suggested that this mechanism is mainly due to the interplay of two
laser-induced processes. On one hand, we have the establishment of a
strong temperature gradient in the vicinity of the laser spot and, as
a result, the recoil of compressive/tensile pressure waves in both
radial and vertical directions. The nanobump solidification, on the
other hand, is mostly due to fast electron heat conduction in the
multidimensional space that in turn results in an extremely fast
cooling of the melted region.
Currently,
we are bearing further calculations at New National Facility at Irish
Centre of High-End Computing National, and more detailed discussions
on this study are being prepared for the report in [[vi]].
Figure
2.
Computational cell set-up used in MD calculations is represented by a
snapshot taken at t = 60 ps from the simulation of 1 ps laser pulse
interaction with 20 nm Ni film on a silica substrate at the absorbed
fluence of 1.53 J/cm2. The pulse diameter is 10 nm.
Different types of boundaries are indicated schematically. The atoms
are colored according to their local order parameter [Error! Bookmark not defined.].
Blue particles belong to the liquid and red particles have a
crystalline surrounding. “Liquid strips” reveal the leftover of
stacking faults that are left behind by partial dislocations and,
having a higher energy, provide preferable sites for the beginning of
melting.
[[i]]
F. Korte, J. Koch, B. N. Chichkov, “Formation of
Microbumps and Nanojets on Gold Targets by Femtoseccond Laser
Pulse”, Appl. Phys. A 79,
879 (2004).
[[ii]]
J. Koch, F. Korte, T. Bauer, C. Fallnich, A. Ostendorf, B.
N. Chichkov, “Nanotexturing of Gold Films by Femtosecvond
Laser-Induced Melt Dynamics”, Appl.
Phys. A 81, 325
(2005).
[[iii]]
D. S. Ivanov and L. V. Zhigilei, “Combined
Atomistic-Continuum Modeling of Short-Pulse Laser Melting and
Disintegration of Metal Films”, Phys.
Rev. B 68, 064114
(2003).
[[iv]]
D. S. Ivanov and L. V. Zhigilei, “Effect of Pressure
Relaxation on the Mechanisms of Short-Pulse Laser Melting”, Phys.
Rev. Lett. 91, 105701 (2003).
[[v]]
D. S. Ivanov and L. V. Zhigilei, “Combined
Atomistic-Continuum Model for Simulation of Laser Interaction with
Metals: Application to Calculation of Melting Threshold in Ni
Targets of Varying Thickness”, Appl.
Phys. A 79, 977 (2004).
[[vi]]
D. S. Ivanov, A. Volkov, L. V. Zhigilei, J. Koch, B.
Chichkov, G. O’Connor, and T. Glynn, “The Mechanism of
Microbump/Nanojet Formation due to Short Pulse Laser Surface
Nanostructuring”, in preparation (2006).
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| Short
Pulse Laser Ablation of Silicon |
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Although
the problem on ablation of silicon has been intensively studied for
the last several decades, due to its vast application in industry and
increasingly growing requirements on controllability of the ablative
experiments, there are still many unsolved questions. The answers to
these questions can not only reinforce the industrial applications,
but also advance the understanding of fundamental physics of laser
ablation of silicon.
The
origin of the current study arises from a industrially focussed project where
machining of silicon with nanosecond pulses was used for production of
a sequence of slots and trenches in silicon wafer substrates[[i]].
Typically, the ejected matter from laser ablation forms a highly ionized plasma, which
expands rapidly away from the surface and leads to the generation of a
compression or shock wave. As
this shock wave propagates, at supersonic speeds, the pressure and
temperature behind the wave decreases [[ii]].
The interaction of this rapidly changing thermodynamic state of
the ambient, with the suspended ablated matter, can lead to the
formation of vaporized matter droplets.
In features with a high aspect ratio, where the ratio of the
depth of the feature to its width is greater than 1, re-deposition of
laser generated debris on the side-walls of the laser drilled holes,
reduces the machining rate where multiple passes of the laser is used.
By changing the laser process and environment in which the ablated material is
transported can lead to reduced re-deposition and this has been
identified by NCLA as being of critical importance in increasing the
throughput of laser ablative processes.
While
experimental research is being developed further, the theoretical
investigation, on the other hand, is mainly focused on computational
study. Since the experiments on laser ablation of silicon encompass
relatively large spatial and temporal scale, to describe this problem
computationally it was decided use a composite approach. The main idea
of this approach is to treat laser-silicon interaction on atomic level
with Molecular Dynamics (MD) method for the first hundreds of
picoseconds up to the formation of the ejected matter plume. Then,
further expansion of this plume is currently thought to be described
with Hydrodynamics Model (HD). Note that the output from MD
calculations, such as cluster size and their velocity distribution
will be used as an input into HD description.
The
first step of the computational description of laser ablation of
silicon is the creation of an appropriate atomistic model. Certainly,
the classical MD approach under conditions realized during short
(several picoseconds) pulse laser-silicon interaction fails to
describe the laser energy absorption resulting in electron-hole free
carriers generation, fast electron-hole conduction mechanism, and
phonon emmitance due to relaxation of the electron-hole pairs.
Therefore, an atomistic-continuum description, similar to the one for
metals reported in [[iii]]
is needed. In this model, the laser energy absorption, the fast
electron-hole thermal conduction, and the electron-hole relaxation
process will be described on continuum level based on the theory
presented in [[iv],[v]].
The process of non equilibrium phase transformation, the evolution of
laser-induced processes, and finally the formation of ablative plume,
on the other hand, will be treated on atomic level with
parameterization of the interatomic potential given by Stillinger and
Webber in [[vi]].
However, if change of the potential versus electron-hole pair
excitation is accounted for in a rather simplified manner in [[vii]]
in the present model the change of bonding will be fitted according to
the first principals calculation. Such fitting method was successfully
applied in [[viii]]
while creating a highly optimized potential for Si.
Furthermore,
the expansion of the laser-plasma plume will be described on continuum
level. However, on ordinary finite differences scheme might not work
here properly as the plasma plume expansion as assisted with strong
shocks registered in the experiments [2
] and Essentially Non Oscillating (ENO) schemes [[ix]]
should be used to avoid instabilities during calculations. Finally, it
has been claimed repeatedly that gas dynamics equations are not
suitable to describe laser plasma expansion. Therefore, the results of
our calculations performed on continuum level will be compared with
those obtained in more sophisticated models [[x]].
Currently,
the atomistic part of the model is being implemented. The fitting of
the interatomic potential has been planned to obtain in collaboration
with Computational Group at Lawrence Livermore National Laboratory.
The description of laser plasma plume expansion is currently thought
to give in 1D case but with ENO scheme implemented.
[[i]]
J. Ren, S. S. Orlov, L. Hesselink, H. Howard, and A.
Conneely, “Nanosecond Laser Silicon Micromachining”, Proc.
SPIE 5339, 382 (2004).
[[ii]]
G. M. O’Connor, H. Howard, A. J. Conneely, and T. J.
Glynn, “Analysis of Debris Generated During UV Laser
Micromachining of Silicon”, Proc.
SPIE 5339, 241
(2005).
[[iii]]
D. S. Ivanov and L. V. Zhigilei, “Combined
Atomistic-Continuum Modelling of Short-Pulse Laser Melting and
Disintegration of Metal Films”, Phys.
Rev. B 68, 064114 (2003) also in Virtual
Journal of Ultrafast Science, September (2003).
[[iv]]
E. J. Yoffa, “Dynamics of Dense Laser-Iduced Plasma”, Phys.
Rev. B 21, 2415
(1980).
[[v]]
J. F. Young and H. M. van Driel, “Ambipolar Diffusoion of
High-Density Electrons and Holes in Ge, Si, and GaAs: Many-Body
Effects”, Phys. Rev. B
26, 2147 (1982).
[[vi]]
F. H. Stillinger and T. A. Weber, “Computer Simulatiion
of Local Order in Condensed Phase Silicon”, Phys.
Rev. B 31, 5262 (1985).
[[vii]]
R. Holenstein, S. E. Kirkwood, R. Fedosejevs, and Y. Y.
Tsui, “Simulation of Femtosecond Laser Ablation of Silicon”, Proc.
SPIE 5579, 688
(2004).
[[viii]]
T. J. Lenosky, B. Sadigh, E. Alonso, V. V. Bulatov, T. D.
de la Rubia, J. Kim, A. F. Voter, and J. D. Kress, Modelling
Simul. Mater. Sci. Eng. 8,
825 (2000).
[[ix]]
T. J. Barth and H. Deconinck, “High-Order Methods for
Computational Physics”, Springer-Verlag Berlin Heidelberg New-York, 2003.
[[x]]
T. E. Itina, J. Hermann, P. Delaporte and M. Sentis,
Laser-Generated Plasma Plume Expansion: Combined
Continous-Microscopic Modeling, Phys.
Rev. E 66, 066406
(2002).
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